On the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D
نویسندگان
چکیده
Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.
منابع مشابه
Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors
Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors" (2008). One-dimensional ͑1D͒ and two-dimensional ͑2D͒ metal-oxide-semiconductor field-effect transistors are compared using an approach based on the top-of-the-barrier ballistic transport model. The results for model devices show that 1D and 2D transistors...
متن کاملA Novel ±0.5V Ultra High Current Drive and Output Voltage Headroom Current Output Stage with Very High Output Impedance
A novel ultra-high compliance, low power, very accurate and high output impedance current output stage (COS) with extremely high output current drive capability is proposed in this paper. The principle of operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by HSPICE simulation in TSMC 0.18µm CMOS, BSIM3, and Level4...
متن کاملExtraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors.
We report a trion (charged exciton) binding energy of ∼162 meV in few-layer phosphorene at room temperature, which is nearly 1-2 orders of magnitude larger than those in two-dimensional (2D) transition metal dichalcogenide semiconductors (20-30 meV) and quasi-2D quantum wells (∼1-5 meV). Such a large binding energy has only been observed in truly one-dimensional (1D) materials such as carbon na...
متن کاملUltrathin One- and Two-Dimensional Colloidal Semiconductor Nanocrystals: Pushing Quantum Confinement to the Limit
Research on ultrathin nanomaterials is one of the fastest developing areas in contemporary nanoscience. The field of ultrathin one- (1D) and two-dimensional (2D) colloidal nanocrystals (NCs) is still in its infancy, but offers the prospect of production of ultrathin nanomaterials in liquid-phase at relatively low costs, with versatility in terms of composition, size, shape, and surface control....
متن کاملElectronic and spin properties of hole point contacts
We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4 × 4 Luttinger description of the valence band, we have calculated quasi-onedimensional (quasi-1D) hole subband energies and anisotropic Landé g-factors. Confinement-induced band mixing results in the possibility to manipulate...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 10 شماره
صفحات -
تاریخ انتشار 2015